Highly dense excition-polariton system in semiconductor microcavity
Time: Tue Jun 17 13:00:00 2014
Location: Building 1, Room 114, Auditorium
An excition-polariton system in a semiconductor microcavity shows the weakly interacted Bose-Einstein condensation. On the other hand, due to the same structure to Vertical Cavity Surface Emitting Laser (VCSEL), in the highly dense regime, the Mott transition seems to be expected. Thereafter, the photon lasing is naively expected. We report the successful demonstration of our predicted lasing in which an excition-polariton system in a semiconductor microcavity can be explained by the Bardeen–Cooper–Schrieffer gap equation. We observe the photoluminescence sideband to be consistent with the Mollow-triplet like phenomena in our theoretical model with many-body effect under the non-equilibrium situation. This cannot be explained by conventional photon lasing with population inversion in low temperature, high excitation regime. Our results suggest that there still remain electron-hole pairs contrary to conventional expectations in a highly excited exciton-polariton system. This system could provide a new breed of an exciton-polariton lasing mechanism.